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硅及氧化硅等离子体刻蚀RIE

¥1,500.00

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分类：前道晶圆制造

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技术指标

晶圆尺寸: 6英寸
可刻蚀材料：Si、SiO2、Si3N4等
片内均一性：≤5%
刻蚀速率：＞3500A/min